Sun, C. et al. Low V silicon photonics modulators with highly linear epitaxially grown phase shifters. Qiang Lin. Single-chip microprocessor that communicates directly using light. Lithium Niobate Electro-Optic Modulators, Fiber-Coupled (1260 nm - 1625 nm) Up to 40 GHz Lithium Niobate (LiNbO 3) Modulators Fiber-Coupled, High-Speed Modulation Intensity, Phase, or I/Q X-Cut or Z-Cut Devices LNP6118 40 GHz Phase Modulator with Polarizer, Z-Cut LN81S-FC 10 GHz Intensity Modulator, X-Cut LNLVL-IM-Z Bryan Kelly on Twitter: "RT @OpticaPubsGroup: View Spotlight analysis Chen, L., Xu, Q., Wood, M. G. & Reano, R. M. Hybrid silicon and lithium niobate electro-optical ring modulator. Thin-film lithium niobate electro-optic modulators: To etch or not to A hybrid waveguide with a lithium niobate thin film bonded on a silicon wire is employed. 1c), optimization of the photonic potential via an appropriate pattern of lattice constant (Fig. Nature 528, 534538 (2015). 1 Half-wave voltages of devices with different active lengths. High-quality lithium niobate photonic crystal nanocavities. Peer review information Nature Communications thanks Huihui Lu, and the other, anonymous, reviewer(s) for their contribution to the peer review of this work. Dylan Renaud, Daniel Rimoli Assumpcao, Marko Loncar, Emma Lomonte, Martin A. Wolff, Francesco Lenzini, Qiushi Guo, Ryoto Sekine, Alireza Marandi, Minh A. Tran, Chong Zhang, Tin Komljenovic, Timothy P. McKenna, Hubert S. Stokowski, Amir H. Safavi-Naeini, Kengo Nozaki, Shinji Matsuo, Masaya Notomi, Nature Communications Google Scholar. Dynamically tunable single-/dual-band of the graphene absorber with a The elliptical hole has dimensions of hx=270nm and hy=490nm, and a fully etched depth of 300nm. Tanabe, T., Nishiguchi, K., Kuramochi, E. & Notomi, M. Low power and fast electro-optic silicon modulator with lateral p-i-n embedded photonic crystal nanocavity. The devices exhibit a significant tuning efficiency up to 1.98 GHz V -1, a broad modulation bandwidth of 17.5 GHz, while with a tiny electro-optic modal volume of only 0.58 m 3. 41, 57005703 (2016). Although attempts have been made to explore the electro-optic effect in LN photonic crystals40,41,42, the low device quality and poor optoelectronic integration unfortunately limit seriously the operation speed. Loncar is a cofounder of HyperLight Corporation, a startup which was launched to commercialize integrated photonic chips based on certain innovations developed in his lab. High modulation efficiency lithium niobate Michelson interferometer modulator. This value is the smallest switching energy ever reported for LN EOMs1,13,14,15,16,17,18,19,20,21,22,23,24,25,26, clearly showing the high energy efficiency of our devices. Hybrid Silicon and Lithium Niobate Modulator - IEEE Xplore M.L. ISSN 0028-0836 (print). 1e) is still able to produce a well-confined point-defect cavity, with a simulated optical Q of ~105 for the fundamental transverse-electric-like (TE-like) cavity mode, \({\mathrm{{TE}}}_{01}^{0}\), shown in Fig. Tzuang, L. D., Fang, K., Nussenzveig, P., Fan, S. & Lipson, M. Non-reciprocal phase shift induced by an effective magnetic flux for light. C.W., M.Z., X.C., P.W. The energy efficiency of the LN photonic-crystal EOM can be further improved since our current devices are not optimized. Koeber, S. et al. Google Scholar. A typical design requires a full air cladding to improve the optical quality factor43,45,46. High-performance and linear thin-film lithium niobate MachZehnder modulators on silicon up to 50GHz. The modulators are manufactured upon a commercial x-cut lithium niobate on isolator (LNOI) wafer (NANOLN) with a thin-film LN thickness of 500 nm, which is bonded to a buried silica (SiO 2) layer on a 500-m-thick silicon (Si) substrate. The high efficiency of electro-optic tuning together with the high optical quality of the EOM resonator enables efficient electrical driving of the optical mode into different dynamic regimes. The sub-wavelength-scale EOM cavity enables compact optoelectronic integration to achieve not only a high electro-optic tuning efficiency up to 16.0pmV1 (corresponding to 1.98GHzV1) that is significantly beyond other LN EOM resonators13,14,15,16,18,19,23,26, but also a large modulation bandwidth up to 17.5GHz that reaches the photon-lifetime limit of the EOM cavity. Express 26, 2372823739 (2018). Lithium niobate photonic-crystal electro-optic modulator. 50-Gb/s silicon optical modulator. B 97, 104105 (2018). Ultrahigh-Q lithium niobate microring resonator with multimode waveguide Lett. Silicon optical modulators. This work demonstrates the first (to the best of our knowledge) thin film lithium niobate electro-optic modulator operating at a wavelength of 1064 nm. As shown in Fig. Enhanced electro-optic lithium niobate photonic crystal wire waveguide on a smart-cut thin film. Integrated lithium niobate electro-optic modulators operating at CMOS-compatible voltages. High-performance hybrid silicon and lithium niobate Mach Zehnder modulators for 100 Gbit s1 and beyond. Nguyen, H. C., Hashimoto, S., Shinkawa, M. & Baba, T. Compact and fast photonic crystal silicon optical modulators. Express 17, 2250522513 (2009). Integrating high-performance plug-and-play lasers would significantly reduce the cost, complexity, and power consumption of future communication systems, said Amirhassan Shams-Ansari, a graduate student at SEAS and first author of the study. 27), which is about 22fJ per bit in our EOM. 5, 425429 (2011). We are also able to achieve high-speed electro-optic switching of at 11Gbs1, with switching energy as low as 22fJ per bit. Photon. With these devices, we are able to demonstrate efficient electrical driving of high-Q cavity mode in both adiabatic and non-adiabatic regimes and to observe transition in between. Opt. Topics: . By submitting a comment you agree to abide by our Terms and Community Guidelines. Heterogeneous microring and Mach-Zehnder modulators based on lithium niobate and chalcogenide glasses on silicon. Xinlun Cai, of Sun Yat -sen University, led a team that designed and fabricated a thin-film lithium niobate (TFLN) dual polarization in-phase and quadrature (DP-IQ) modulator, which sets new world . Integrated lithium niobate photonics is a promising platform for the development of high-performance chip-scale optical systems, but getting a laser onto a lithium niobate chip has proved to be one of the biggest design challenges, said, , the Tiantsai Lin Professor of Electrical Engineering and Applied Physics at SEAS and senior author of the study. They also thank Wuxiucheng Wang, Lejie Lu, and Ming Gong for valuable discussions and help on testing. Its a building block that can be integrated into larger optical systems for a range of applications, in sensing, lidar, and data telecommunications.. 4, e255 (2015). 1a), where an injector section (Fig. Opt. Here, we make an important step towards miniaturizing functional components on this platform, reporting high-speed LN electro-optic modulators, based upon photonic crystal nanobeam resonators.
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